双子佯谬与星际航行

计算了在两个假想的星际航行方案中,与"双子佯谬"相关的时间差别.这种差别体现了惯性与非惯性参考系经历的时间有绝对差异,而不再是"相对"效应.     

TDPAC and first-principles study of electronic and structural properties of a Pd-vacancy complex in undoped germanium

Pd is one of the metals suitable for inducing low-temperature crystallization in Ge. However, it is not clear how residual Pd atoms are integrated into the Ge lattice. Therefore, time-differential γ–γ perturbed angular correlations (TDPAC) technique using the ¹⁰⁰Pd(→¹⁰⁰Rh) nuclear probe produced by recoil implantation has been applied to study the hyperfine interactions of this probe in single-crystalline undoped Ge. A Pd-vacancy complex aligned along the <111> crystallographic direction with a unique interaction frequency of 8.4(5) Mrad/s has been identified. This complex was measured to have a maximum relative fraction of about 76(4)% following annealing at 350 ^°C. Further annealing at higher temperatures reduced this fraction, possibly via dissociation of the complex. Calculations suggest dissociation energy of 1.94(5) eV for the complex. DFT calculations performed in this work are in reasonable good agreement with the experimental values for the electric-field gradient of the defect complex in Ge and Si for comparison. The calculations predict a split-vacancy configuration with the Pd on a bond-centred interstitial site having a nearest-neighbour semi-vacancy on both sides (V-Pd_BI-V) in Ge and Si.     

Gauge natural formulation of conformal gravity

We consider conformal gravity as a gauge natural theory. We study its conservation laws and superpotentials. We also consider the Mannheim and Kazanas spherically symmetric vacuum solution and discuss conserved quantities associated to conformal and diffeomorphism symmetries.     

Analytic hierarchy process for multi-sensor data fusion based on belief function theory

Multi-sensor data fusion is an evolving technology whereby data from multiple sensor inputs are processed and combined. The data derived from multiple sensors can, however, be uncertain, imperfect, and conflicting. The present study is undertaken to help contribute to the continuous search for viable approaches to overcome the problems associated with data conflict and imperfection. Sensor readings, represented by belief functions, have to be fused according to their corresponding weights. Previous studies have often estimated the weights of sensor readings based on a single criterion. Mono-criteria approaches for the assessment of sensor reading weights are, however, often unreliable and inadequate for the reflection of reality. Accordingly, this work opts for the use of a multi-criteria decision aid. A modified Analytical Hierarchy Process (AHP) that incorporates several criteria is proposed to determine the weights of a sensor reading set. The approach relies on the automation of pairwise comparisons to eliminate subjectivity and reduce inconsistency. It assesses the weight of each sensor reading, and fuses the weighed readings obtained using a modified average combination rule. The efficiency of this approach is evaluated in a target recognition context. Several tests, sensitivity analysis, and comparisons with other approaches available in the literature are described.     

Springer basic sets and modular Springer correspondence for classical types

We define the notion of basic set data for finite groups (building on the notion of basic set, but including an order on the irreducible characters as part of the structure), and we prove that the Springer correspondence provides basic set data for Weyl groups. Then we use this to determine explicitly the modular Springer correspondence for classical types (defined over a base field of odd characteristic $p$, and with coefficients in a field of odd characteristic $?\ne p$): the modular case is obtained as a restriction of the ordinary case to a basic set. In order to do so, we compare the order on bipartitions introduced by Dipper and James with the order induced by the Springer correspondence. We provide a quick proof, by sorting characters according to the dimension of the corresponding Springer fibre, an invariant which is directly computable from symbols.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Collective Tunnelling of Strongly Interacting Cold Atoms in a Double-Well Potential

It is known that under resonance conditions, a group of strongly interacting bosonic atoms, trapped in a double-well potential, mimics a single particle, performing Rabi oscillations between the wells. By implication, all atoms need to tunnel at roughly the same time, even though the Bose–Hubbard Hamiltonian accounts only for one-atom-at-a-time transfers. The mechanism of this collective behavior is analyzed, the Rabi frequencies in the process are evaluated, and the limitation of this simple picture is discussed. In particular, it is shown that the small rapid oscillations superimposed on the slow Rabi cycle result from splitting the transferred cluster at the sudden onset of tunnelling, and disappear if tunnelling is turned on gradually.     

TBOR-shaped electro-optic modulator with dual output based on double-layer graphene

We proposed an electro-optic modulator with two-bus one-ring (TBOR) structure to improve the extinction ratio and reduce insert loss. It has a dual output compared with one-bus one-ring structure. In addition, double-layer graphene makes it possible for the modulation in the visible to mid-infrared wavelength range. It shows that this new electro-optic modulator can present two switching states well with low insertion loss, high absorption and high extinction ratio. At $\lambda =1550\text{ nm}$, when the switching states are based on the chemical potential, ${\mu }_{\mathrm{c}}=0.38\text{ eV}$ and ${\mu }_{\mathrm{c}}=0.4\text{ eV}$, the insertion losses of both output ports are less than 2 dB, the absorption of the output port coupled via a micro-ring reaches 45 dB and the extinction ratio reaches 14 dB. When the refractive index of the dielectric material is 4.2, the applied voltage will be less than 1.2 V, thus can be used in low-voltage CMOS technology.